New Developments in Semiconductor Physics Proceedings of the International Summer School Held in Szeged, Hungary July 1–6, 1979 / [electronic resource] :
edited by Ferenc Beleznay, György Ferenczi, János Giber.
- Berlin, Heidelberg : Springer Berlin Heidelberg, 1980.
- V, 283 p. online resource.
- Lecture Notes in Physics, 122 0075-8450 ; .
- Lecture Notes in Physics, 122 .
Low temperature photo- and magneto-transport involving impurity-phonon resonances in semiconductors -- Optically detected magnetic resonance studies of semiconductors -- Deep level spectroscopy in semicounductors by optical excitation -- Depleted layer spectroscopy -- Luminescence of chromium in gallium arsenide -- Analysis of defect states by transient capacitance methods in proton bombarded gallium arsenide at 300 K and 77 K -- Properties of an extended defect in GaAs.62P.38 -- Large defect-lattice relaxation phenomena in solids -- Temperature dependent decay of a metastable state of systems with large impurity-lattice relaxation (CdF2 : In) -- Electron-phonon interaction: Polaron transport -- Stress dependence of quantum limit hall effect and transverse magnetoresistance in n-InSb -- Photoluminescence in amorphous semiconductors -- Man-made semiconductor superlattices -- The localized states of interfaces and their physical models -- Cyclic cluster model (CCM) in the CNDO approximation for deep levels in covalent solids -- Is there a minimum linewidth in integrated circuits?.
9783540392712
10.1007/3-540-09988-3 doi
Physics.
Physics.
Physics, general.
QC1-75
530
Low temperature photo- and magneto-transport involving impurity-phonon resonances in semiconductors -- Optically detected magnetic resonance studies of semiconductors -- Deep level spectroscopy in semicounductors by optical excitation -- Depleted layer spectroscopy -- Luminescence of chromium in gallium arsenide -- Analysis of defect states by transient capacitance methods in proton bombarded gallium arsenide at 300 K and 77 K -- Properties of an extended defect in GaAs.62P.38 -- Large defect-lattice relaxation phenomena in solids -- Temperature dependent decay of a metastable state of systems with large impurity-lattice relaxation (CdF2 : In) -- Electron-phonon interaction: Polaron transport -- Stress dependence of quantum limit hall effect and transverse magnetoresistance in n-InSb -- Photoluminescence in amorphous semiconductors -- Man-made semiconductor superlattices -- The localized states of interfaces and their physical models -- Cyclic cluster model (CCM) in the CNDO approximation for deep levels in covalent solids -- Is there a minimum linewidth in integrated circuits?.
9783540392712
10.1007/3-540-09988-3 doi
Physics.
Physics.
Physics, general.
QC1-75
530