000 03148nam a22004455i 4500
001 978-3-540-75350-6
003 DE-He213
005 20160624102238.0
007 cr nn 008mamaa
008 100730s1989 gw | s |||| 0|ger d
020 _a9783540753506
_9978-3-540-75350-6
024 7 _a10.1007/BFb0108003
_2doi
050 4 _aQC173.45-173.458
072 7 _aPHF
_2bicssc
072 7 _aSCI077000
_2bisacsh
082 0 4 _a530.41
_223
245 1 0 _aFestkörperprobleme 29
_h[electronic resource] :
_bPlenary Lectures of the Divisions Semiconductor Physics Thin Films Dynamics and Statistical Physics Magnetism Metal Physics Surface Physics Low Temperature Physics of the German Physical Society (DPG), Münster, April 3 to 7, 1989 /
_cherausgegeben von Ulrich Rössler.
260 1 _aBerlin, Heidelberg :
_bSpringer Berlin Heidelberg,
_c1989.
264 1 _aBerlin, Heidelberg :
_bSpringer Berlin Heidelberg,
_c1989.
300 _aVII, 345 S.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 1 _aAdvances in Solid State Physics,
_x0430-3393 ;
_v29
505 0 _aCharge transfer between weakly coupled normal metals and superconductors at low temperatures -- Quantum effects and the onset of superconductivity in granular films -- Pattern formation in a liquid crystal -- X-ray absorption and reflection in materials sciences -- Propagation of large-wavevector acoustic phonons new perspectives from phonon imaging -- Theory of dynamical surface states and reconstructions at crystal surfaces -- Scanning tunneling microscopy and spectroscopy on clean and metal-covered Si surfaces -- Optical dephasing and orientational relaxation of wannier-excitons and free carriers in GaAs and GaAs/AlxGa1?xAs quantum wells -- The spectroscopic evidence for the identity of EL2 and the AsGa antisite in As-grown GaAs -- On the charge state of the EL2 mid gap level semi-insulating GaAs from a quantitative analysis of the compensation -- Deep donor levels (DX centers) in III–V semiconductors: Recent experimental results -- Chemical binding, stability and metastability of defects in semiconductors -- A new look at the reliability of thin film metallizations for microelectronic devices -- Quantum dot resonant tunneling spectroscopy -- DC and far infrared experiments on deep mesa etched single and multi-layered quantum wires -- Coherent electron focusing -- The size-induced metal-insulator transition and related electron interference phenomena in modern microelectronics.
650 0 _aPhysics.
650 0 _aCondensed matter.
650 1 4 _aPhysics.
650 2 4 _aCondensed Matter.
700 1 _aRössler, Ulrich.
_eeditor.
710 2 _aSpringerLink (Online service)
773 0 _tSpringer eBooks
776 0 8 _iPrinted edition:
_z9783528080358
786 _dSpringer
830 0 _aAdvances in Solid State Physics,
_x0430-3393 ;
_v29
856 4 0 _uhttp://dx.doi.org/10.1007/BFb0108003
942 _2EBK11264
_cEBK
999 _c40558
_d40558