TY  - BOOK
AU  - Giber,J.
AU  - Beleznay,F.
AU  - Szép,I.C.
AU  - László,J.
ED  - SpringerLink (Online service)
TI  - Defect Complexes in Semiconductor Structures: Proceedings of the International School Held in Mátrafüred, Hungary September 13–17, 1982 
T2  - Lecture Notes in Physics,
SN  - 9783540394563
AV  - QC173.45-173.458 
U1  - 530.41 23
PY  - 1983///
CY  - Berlin, Heidelberg
PB  - Springer Berlin Heidelberg
KW  - Physics
KW  - Condensed matter
KW  - Condensed Matter
N1  - A technologist's view on defects -- Characterization of impurities and defects by electron paramagnetic resonance and related techniques -- Review of the possibilities of electron microscopy in the identification of defect structures -- Electrical and optical measuring techniques for flaw states -- Theory of defect complexes -- Critical comparison of the theoretical models for anomalous large lattice relaxation in III–V compounds -- Vacancy related structure defects in SiO2 — Cyclic cluster calculations compared with experimental results -- A new model for the Si-A center -- Defect complexing in iron-doped silicon -- Photoluminescence of defect complexes in silicon -- Electron microscopical analysis of the stacking fault behaviour in inert-gas annealed Czochralski silicon -- Oxygen precipitation and the generation of secondary defects in oxygen-rich silicon -- Electrical and optical properties of oxygen-related donors in silicon formed at temperatures from 600 to 850 °c -- On the field dependence of capture and emission processes at deep centres -- Lattice matched heterolayers -- Compositional transition layers in heterostructure -- Defect complexes in III–V compounds -- Low frequency current oscillations due to electron retrapping by the AsGa antisite defect in GaAs -- Main electron traps in gaas: Aggregates of antisite defects -- Defect reactions in gap caused by zinc diffusion -- Nonstatistical defect surroundings in mixed crystals — the selfactivated luminescence centre in ZnSxSe1-x -- Structure and properties of the Si-SiO2 interregion -- Radiation defects of the semiconductor-insulator interface -- Analysis of Si/SiO2 interface defects by the method of term spectroscopy -- Theoretical aspects of laser annealing -- Radiation methods for creation of heterostructures on silicon -- Ion beam gettering in GaP -- Panel discussion -- Mechanical stress induced defect creation in GaP
UR  - http://dx.doi.org/10.1007/3-540-11986-8
ER  -